Selected(0)Clear
Items/Page: Sort: |
| CsPbI2Br薄膜的可控制备及其在全无机钙钛矿光伏器件中的应用研究 学位论文 工学博士, 北京: 中国科学院大学, 2019 Authors: 董琛 Adobe PDF(7950Kb)  |  Favorite  |  View/Download:221/1  |  Submit date:2019/10/31 CsPbI2Br 溶剂工程 成膜质量 碳电极 全无机钙钛矿电池 Solvent engineering Film quality Carbon electrode All-inorganic perovskite solar cells |
| Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations 期刊论文 Applied Physics A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 2, 页码: 108(1-5) Authors: Li J(李健); Han XX(韩修训); Dong C(董琛); Fan, Changzeng; Han XX(韩修训) Adobe PDF(1348Kb)  |  Favorite  |  View/Download:75/0  |  Submit date:2018/06/11 |
| Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure 期刊论文 Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6 Authors: Li J(李健); Han XX(韩修训); Dong C(董琛); Fan, Changzeng; Han XX(韩修训) Adobe PDF(1495Kb)  |  Favorite  |  View/Download:94/2  |  Submit date:2017/12/18 First-principles Calculations Gaas1-xnx Alloys High Pressure Dilute Nitrides n Concentration Band Gap |
| Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文 Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56 Authors: Dong C(董琛); Han XX(韩修训); Li J(李健); Gao, Xin; Yoshio Ohshita; Han XX(韩修训) Adobe PDF(862Kb)  |  Favorite  |  View/Download:81/1  |  Submit date:2017/12/18 Gaasn Schottky Barrier Diodes (Sbds) Growth Orientation C-v And G/ω-v Characteristics Interface States |
| (n11)取向GaAsN外延材料的Si掺杂行为及肖特基接触特性研究 学位论文 , 北京: 中国科学院大学, 2016 Authors: 董琛 Adobe PDF(4849Kb)  |  Favorite  |  View/Download:141/0  |  Submit date:2016/11/24 Gaasn 生长取向 外延生长 光电特性 Growth Orientation Epitaxial Growth Optoelectronic Characteristics |
| Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文 Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46 Authors: Li J(李健); Han XX(韩修训); Dong C(董琛); Fan ZZ(范长增); Yoshio Ohshita; Masafumi Yamaguchi; Han XX(韩修训) Adobe PDF(1305Kb)  |  Favorite  |  View/Download:98/1  |  Submit date:2016/10/25 Gaasn First Principle Calculation n Incorporation Growth Orientation Chemical Potentials |
| Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文 Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329 Authors: Dong C(董琛); Han XX(韩修训); Gao, Xin; Yoshio Ohshita; Masafumi Yamaguchi; Han XX(韩修训) Adobe PDF(1243Kb)  |  Favorite  |  View/Download:179/2  |  Submit date:2015/12/30 Gaasn Schottky Diode Growth Orientation I-v Characteristics C-v Characteristics Electrical Properties |
| Growth orientation dependence of Si doping in GaAsN 期刊论文 Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4) Authors: Han XX(韩修训); Dong C(董琛); Feng, Qiang; Ohshita, Yoshio; Yamaguchi, Masafumi; Han XX(韩修训) Adobe PDF(613Kb)  |  Favorite  |  View/Download:105/5  |  Submit date:2015/12/30 |