| Growth orientation dependence of Si doping in GaAsN | |
| Department | 清洁能源化学与材料实验室 |
Han XX(韩修训)1,2 ; Dong C(董琛)1; Feng, Qiang3; Ohshita, Yoshio4; Yamaguchi, Masafumi4; Han XX(韩修训)
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| The second department | 固体润滑国家重点实验室 |
| 2015 | |
| Source Publication | Journal of Applied Physics
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| ISSN | 0021-8979 |
| Volume | 117Issue:5Pages:055706(1-4) |
| Abstract | The incorporation of Si in GaAsN alloys grown simultaneously on (100), (311)A, (311)B, and (211)B GaAs substrates by the chemical beam epitaxy has been investigated. The decrease in electron concentration with the increasing N composition suggests the occurrence of N and Si interaction, whereas the interaction exhibits evidently different extent depending on the growth orientation. Combined with the secondary ion mass spectrometry and photoluminescence measurements, it is revealed that (311)B and (211)B are the promising substrate orientations to reduce the N-Si passivation and improve n-type Si doping in GaAsN over a wider N composition range. A surface bonding model is utilized to explain the plane polarity dependent incorporation behaviors of Si and N. |
| Subject Area | 材料科学与物理化学 |
| DOI | 10.1063/1.4907389 |
| Funding Organization | the National Natural Science Foundation of China (Grant No. 61376066);“Top Hundred Talents Program” of Chinese Academy of Sciences;the New Energy Development Organization (NEDO) under the ministry of Economy, Trade and Industry, Japan |
| Indexed By | SCI |
| If | 2.101 |
| Language | 英语 |
| Funding Project | 光电材料与器件研究组 |
| compositor | 第一作者单位 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.licp.cn/handle/362003/19028 |
| Collection | 清洁能源化学与材料实验室 固体润滑国家重点实验室（LSL） |
| Corresponding Author | Han XX(韩修训) |
| Affiliation | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, Lab Clean Energy Chem & Mat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 3.Chinese Acad Sci, Optoelect Dept, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China 4.Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan |
| Recommended Citation GB/T 7714 | Han XX,Dong C,Feng, Qiang,et al. Growth orientation dependence of Si doping in GaAsN[J]. Journal of Applied Physics,2015,117(5):055706(1-4). |
| APA | Han XX,Dong C,Feng, Qiang,Ohshita, Yoshio,Yamaguchi, Masafumi,&韩修训.(2015).Growth orientation dependence of Si doping in GaAsN.Journal of Applied Physics,117(5),055706(1-4). |
| MLA | Han XX,et al."Growth orientation dependence of Si doping in GaAsN".Journal of Applied Physics 117.5(2015):055706(1-4). |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2015_Growth orientat（613KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
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