Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations | |
Department | 清洁能源化学与材料实验室 |
Li J(李健)1,2; Han XX(韩修训)2; Dong C(董琛)2,3; Fan, Changzeng4; Han XX(韩修训) | |
2018 | |
Source Publication | Applied Physics A-MATERIALS SCIENCE & PROCESSING |
ISSN | 0947-8396 |
Volume | 124Issue:2Pages:108(1-5) |
Abstract | To quantitatively evaluate the formation energies of the (N–N)As/(N–As)As/(As–As)As split interstitials in dilute GaAsN alloys, first-principles total-energy calculations using a projector augmented wave method are performed. The formation energies for different defects are calculated as a function of the atomic chemical potentials of constituent elements. We compare the formation energies for the NAs substitution and split interstitial complexes based on the traditional (100) and high-index GaAs (311) A/B plane under Ga-rich and As-rich conditions. According to the results of comparison, the chemical potential condition of forming-related defect and the dominant defect for all planes are determined. |
Subject Area | 材料科学与物理化学 |
DOI | 10.1007/s00339-017-1536-7 |
Funding Organization | the National Natural Science Foundation of China (Grant No. 61376066) |
Indexed By | SCI |
Language | 英语 |
Funding Project | 光电材料与器件研究组 |
compositor | 第二作者单位 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.licp.cn/handle/362003/23726 |
Collection | 清洁能源化学与材料实验室 |
Corresponding Author | Han XX(韩修训) |
Affiliation | 1.Qinghai Normal Univ, Coll Phys & Elect Informat Engn, Xining 810000, Qinghai, Peoples R China 2.Chinese Acad Sci, Lanzhou Inst Chem Phys, Lab Clean Energy Chem & Mat, Lanzhou 730000, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100080, Peoples R China 4.Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China |
Recommended Citation GB/T 7714 | Li J,Han XX,Dong C,et al. Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations[J]. Applied Physics A-MATERIALS SCIENCE & PROCESSING,2018,124(2):108(1-5). |
APA | Li J,Han XX,Dong C,Fan, Changzeng,&韩修训.(2018).Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations.Applied Physics A-MATERIALS SCIENCE & PROCESSING,124(2),108(1-5). |
MLA | Li J,et al."Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations".Applied Physics A-MATERIALS SCIENCE & PROCESSING 124.2(2018):108(1-5). |
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s00339-017-1536-7.pd(1348KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text |
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