Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations | |
Department | 清洁能源化学与材料实验室 |
Li J(李健)1; Han XX(韩修训)1,2; Dong C(董琛)1,3; Fan ZZ(范长增)4; Yoshio Ohshita5; Masafumi Yamaguchi5; Han XX(韩修训) | |
The second department | 固体润滑国家重点实验室 |
2016 | |
Source Publication | Journal of Alloys and Compounds |
ISSN | 0925-8388 |
Volume | 687Pages:42-46 |
Abstract | The growth orientation dependence of N incorporation on traditional (100) and high-index GaAs (311)A/B planes has been investigated by the first principle calculation and experimental measurement. Due to the electronegativity and atomic radius differences between As and N atoms, the GaN bond is much shorter than the corresponding GaAs bond as N occupies As atom site. The optimization to energetically preferred construction leads to the inward moving of N atom, while the displacement extent of three surface models exhibits considerable differences. More importantly, the theoretical result reveals a lower formation energy of N doping for N@(311)B GaAs surface and a larger one for N@(311)A GaAs surface as compared with the traditional (100) GaAs plane. The first principle investigations thus suggest the enhanced N incorporation in (311)B GaAsN, which is in good accordance with the secondary ion mass spectrometry (SIMS) measurement results of GaAsN layers by chemical beam epitaxy (CBE). |
Keyword | Gaasn First Principle Calculation n Incorporation Growth Orientation Chemical Potentials |
Subject Area | 材料科学与物理化学 |
DOI | 10.1016/j.jallcom.2016.06.114 |
Funding Organization | the National Natural Science Foundation of China (Grant No. 61376066);“Top Hundred Talents Program” of Chinese Academy of Sciences |
Indexed By | SCI |
If | 3.133 |
Language | 英语 |
Funding Project | 光电材料与器件研究组 |
compositor | 第一作者单位 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.licp.cn/handle/362003/20475 |
Collection | 清洁能源化学与材料实验室 固体润滑国家重点实验室(LSL) |
Corresponding Author | Han XX(韩修训) |
Affiliation | 1.Chinese Acad Sci, Lab Clean Energy Chem & Mat, Lanzhou Inst Chem Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, State Key Lab Solid Lubricat, Lanzhou Inst Chem Phys, Lanzhou 730000, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100080, Peoples R China 4.Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China 5.Toyota Technol Inst, Tempaku Ku, 2-12-1 Hisakata, Nagoya, Aichi 4688511, Japan |
Recommended Citation GB/T 7714 | Li J,Han XX,Dong C,et al. Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations[J]. Journal of Alloys and Compounds,2016,687:42-46. |
APA | Li J.,Han XX.,Dong C.,Fan ZZ.,Yoshio Ohshita.,...&韩修训.(2016).Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations.Journal of Alloys and Compounds,687,42-46. |
MLA | Li J,et al."Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations".Journal of Alloys and Compounds 687(2016):42-46. |
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