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中国科学院兰州化学物理研究所机构知识库
KMS Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences
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清洁能源化学与材料实... [7]
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Effects of selenization conditions on microstructure evolution in solution processed Cu2ZnSn(S,Se)4 solar cells
期刊论文
Solar Energy Materials and Solar Cells, 2019, 卷号: 195, 期号: 12, 页码: 274-279
Authors:
Zhao Y(赵雲)
;
Han XX(韩修训)
;
Chang L(常乐)
;
Dong C(董琛)
;
Li JS(栗军帅)
;
Yan XB(阎兴斌)
Adobe PDF(3807Kb)
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View/Download:131/0
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Submit date:2019/11/20
Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations
期刊论文
Applied Physics A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 2, 页码: 108(1-5)
Authors:
Li J(李健)
;
Han XX(韩修训)
;
Dong C(董琛)
;
Fan, Changzeng
;
Han XX(韩修训)
Adobe PDF(1348Kb)
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View/Download:86/0
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Submit date:2018/06/11
Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure
期刊论文
Physica B: Condensed Matter, 2017, 卷号: 526, 页码: 1-6
Authors:
Li J(李健)
;
Han XX(韩修训)
;
Dong C(董琛)
;
Fan, Changzeng
;
Han XX(韩修训)
Adobe PDF(1495Kb)
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View/Download:106/2
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Submit date:2017/12/18
First-principles Calculations
Gaas1-xnx Alloys
High Pressure
Dilute Nitrides
n Concentration
Band Gap
Enhancing Open-Circuit Voltage of Solution-Processed Cu2ZnSn(S,Se)(4) Solar Cells With Ag Substitution
期刊论文
IEEE Journal of Photovoltaics, 2017, 卷号: 7, 期号: 3, 页码: 874-881
Authors:
Zhao Y(赵雲)
;
Han XX(韩修训)
;
Xu, Bin
;
Li W(李文)
;
Li J(李健)
;
Li JJ(李佳佳)
;
Wang M(王敏)
;
Dong C(董琛)
;
Ju P(鞠鹏)
;
Li, Junshuai
Adobe PDF(1124Kb)
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View/Download:137/1
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Submit date:2017/08/28
Ag Substitution
Open-circuit Voltage
Cu2znsn(s
Thin Film Solar Cells
Se)(4) (cztsSe)
(n11)取向GaAsN外延材料的Si掺杂行为及肖特基接触特性研究
学位论文
, 北京: 中国科学院大学, 2016
Authors:
董琛
Adobe PDF(4849Kb)
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View/Download:150/0
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Submit date:2016/11/24
Gaasn
生长取向
外延生长
光电特性
Growth Orientation
Epitaxial Growth
Optoelectronic Characteristics
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations
期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:
Li J(李健)
;
Han XX(韩修训)
;
Dong C(董琛)
;
Fan ZZ(范长增)
;
Yoshio Ohshita
;
Masafumi Yamaguchi
;
Han XX(韩修训)
Adobe PDF(1305Kb)
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View/Download:111/1
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Submit date:2016/10/25
Gaasn
First Principle Calculation
n Incorporation
Growth Orientation
Chemical Potentials
Growth orientation dependence of Si doping in GaAsN
期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
Authors:
Han XX(韩修训)
;
Dong C(董琛)
;
Feng, Qiang
;
Ohshita, Yoshio
;
Yamaguchi, Masafumi
;
Han XX(韩修训)
Adobe PDF(613Kb)
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View/Download:113/5
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Submit date:2015/12/30