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| Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文 Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56 Authors: Dong C(董琛); Han XX(韩修训); Li J(李健); Gao, Xin; Yoshio Ohshita; Han XX(韩修训) Adobe PDF(862Kb)  |  Favorite  |  View/Download:81/1  |  Submit date:2017/12/18 Gaasn Schottky Barrier Diodes (Sbds) Growth Orientation C-v And G/ω-v Characteristics Interface States |
| (n11)取向GaAsN外延材料的Si掺杂行为及肖特基接触特性研究 学位论文 , 北京: 中国科学院大学, 2016 Authors: 董琛 Adobe PDF(4849Kb)  |  Favorite  |  View/Download:143/0  |  Submit date:2016/11/24 Gaasn 生长取向 外延生长 光电特性 Growth Orientation Epitaxial Growth Optoelectronic Characteristics |
| Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文 Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46 Authors: Li J(李健); Han XX(韩修训); Dong C(董琛); Fan ZZ(范长增); Yoshio Ohshita; Masafumi Yamaguchi; Han XX(韩修训) Adobe PDF(1305Kb)  |  Favorite  |  View/Download:98/1  |  Submit date:2016/10/25 Gaasn First Principle Calculation n Incorporation Growth Orientation Chemical Potentials |
| Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文 Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329 Authors: Dong C(董琛); Han XX(韩修训); Gao, Xin; Yoshio Ohshita; Masafumi Yamaguchi; Han XX(韩修训) Adobe PDF(1243Kb)  |  Favorite  |  View/Download:179/2  |  Submit date:2015/12/30 Gaasn Schottky Diode Growth Orientation I-v Characteristics C-v Characteristics Electrical Properties |
| WS2及其复合薄膜的制备、结构与性能研究 学位论文 , 北京: 中国科学院大学, 2015 Authors: 孔良桂 Adobe PDF(5053Kb)  |  Favorite  |  View/Download:144/3  |  Submit date:2016/11/24 Ws2薄膜 射频溅射 择优生长取向 摩擦磨损 Ws2 Films Radio Frequency Magnetron Sputtering Preferred Orientation Growth Friction And Wear |