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(n11)取向GaAsN外延材料的Si掺杂行为及肖特基接触特性研究 学位论文
, 北京: 中国科学院大学, 2016
Authors:  董琛
Adobe PDF(4849Kb)  |  Favorite  |  View/Download：143/0  |  Submit date：2016/11/24
Gaasn  生长取向  外延生长  光电特性  Growth Orientation  Epitaxial Growth  Optoelectronic Characteristics  
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
Authors:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan ZZ(范长增);  Yoshio Ohshita;  Masafumi Yamaguchi;  Han XX(韩修训)
Adobe PDF(1305Kb)  |  Favorite  |  View/Download：99/1  |  Submit date：2016/10/25
Gaasn  First Principle Calculation  n Incorporation  Growth Orientation  Chemical Potentials  
Facile synthesis of BiOI in hierarchical nanostructure preparation and its photocatalytic application to organic dye removal and biocidal effect of bacteria 期刊论文
Journal of Colloid and Interface Science, 2016, 卷号: 481, 页码: 47-56
Authors:  Long, Yang;  Wang, Yi;  Zhang D(张盾);  Ju P(鞠鹏);  Sun, Yan;  Zhang D(张盾)
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Bioi  Dye Removal  Adsorption  Antifouling  Visible Light Photocatalysis