Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon | |
Department | 先进润滑与防护材料研究发展中心 |
Wang FG(王富国)1; Zhang MZ(张民珍)2; Zhao GT(赵国亭)2; Cheng JC(程锦春)1; Zhang JY(张俊彦)1; Zhang JY(张俊彦) | |
The second department | 固体润滑国家重点实验室 |
2014 | |
Source Publication | ECS Journal of Solid State Science and Technology |
ISSN | 2162-8769 |
Volume | 3Issue:3Pages:P32-P36 |
Abstract | Porous silicon (PS) films with photocarrier-created pores (PCPs) in the films and symbiotic inverted pyramids (SIPs) at the interfaces were prepared by electrochemical etching of n-type silicon in HF ethanol solution. The effect of back side illumination, doping level of silicon, current density and HF concentration on pore and interface morphology of PS films were investigated. SEM results demonstrated that Photocarriers, generated by back side illumination, was essential to the formation of PCPs and SIPs. The moderately doped n-type silicon with P doping level in 1.1 × 1017−2 × 1016 was suitable for PCP formation. The sizes of SIPs and the quantity of PCPs at their centers could be adjusted by current density when it was smaller than 25 mA cm−2, in which the formation of PCPs competed with the growth of PS film for photocarriers and the increase of current density enhanced the growth of PS film. The formation of SIPs with four crystal planes approaching energy-stable (111) planes was believed to balance these two competitive behaviors. Since the PCPs were actually caused by photocarrier-promoted chemical etching, the HF concentration suitable for PCP formation was smaller than 20%. |
Subject Area | 材料科学与物理化学 |
DOI | 10.1149/2.010403jss |
Indexed By | SCI |
If | 1.558 |
Language | 英语 |
Funding Project | 纳米润滑研究组 |
compositor | 第一作者单位 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.licp.cn/handle/362003/6526 |
Collection | 中国科学院材料磨损与防护重点实验室/先进润滑与防护材料研究发展中心 固体润滑国家重点实验室(LSL) |
Corresponding Author | Zhang JY(张俊彦) |
Affiliation | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 2.Lanzhou Univ, Sch Stomatol, Lanzhou 730000, Peoples R China |
Recommended Citation GB/T 7714 | Wang FG,Zhang MZ,Zhao GT,et al. Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon[J]. ECS Journal of Solid State Science and Technology,2014,3(3):P32-P36. |
APA | Wang FG,Zhang MZ,Zhao GT,Cheng JC,Zhang JY,&张俊彦.(2014).Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon.ECS Journal of Solid State Science and Technology,3(3),P32-P36. |
MLA | Wang FG,et al."Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon".ECS Journal of Solid State Science and Technology 3.3(2014):P32-P36. |
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