| The improvement of the field emission properties from graphene films: Ti transition layer and annealing process | |
| Department | 固体润滑国家重点实验室 |
Li J(李军)1,2; Chen JT(陈江涛)1 ; Luo BM(罗保民)1,2; Yan XB(阎兴斌)1; Xue QJ(薛群基)1; Yan XB(阎兴斌)
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| 2012 | |
| Source Publication | AIP Advances
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| ISSN | 2158-3226 |
| Volume | 2Issue:2Pages:022101(1-9) |
| Abstract | Chemical-reduced graphene oxide (rGO) films were deposited on titanium (Ti)-coated silicon substrates by a simple electrophoretic deposition. The rGO films were annealed under argon atmosphere at different temperatures. The morphology and microstructure of the rGO films before and after annealing were characterized using scanning electron microscope, X-ray diffraction and Raman spectroscope. The field emission behaviors from these rGO films were investigated. The results show that, Ti-based transition layer can improve the stability of field emission from the rGO film, and the annealing at appropriate temperature is in favor of the field emission. Particularly, the rGO film displays an unexpected vacuum breakdown phenomenon at a relatively high current density. In addition, it is found that the field emission property of the rGO film is dependent on anode-sample distance and the film exhibits lower turn on field at larger anode-sample distance. |
| Subject Area | 材料科学与物理化学 |
| DOI | 10.1063/1.3702588 |
| Funding Organization | the Natural Science Foundation of China (51002161);the Top Hundred Talents Program of Chinese Academy of Sciences |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | 低维材料摩擦学组 |
| compositor | 第一作者单位 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.licp.cn/handle/362003/3279 |
| Collection | 固体润滑国家重点实验室（LSL） |
| Corresponding Author | Yan XB(阎兴斌) |
| Affiliation | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100080, Peoples R China |
| Recommended Citation GB/T 7714 | Li J,Chen JT,Luo BM,et al. The improvement of the field emission properties from graphene films: Ti transition layer and annealing process[J]. AIP Advances,2012,2(2):022101(1-9). |
| APA | Li J,Chen JT,Luo BM,Yan XB,Xue QJ,&阎兴斌.(2012).The improvement of the field emission properties from graphene films: Ti transition layer and annealing process.AIP Advances,2(2),022101(1-9). |
| MLA | Li J,et al."The improvement of the field emission properties from graphene films: Ti transition layer and annealing process".AIP Advances 2.2(2012):022101(1-9). |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 022101.PDF（1695KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
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