Preparation of Inverted Pyramids by Electrochemical and Chemical Etching of n-Type Silicon under Thermodynamic Equilibrium State
Department先进润滑与防护材料研究发展中心
Wang, Fuguo; Cao, Zhongyue; Liang, Aimin; Zhang, Xingkai; Qiang, Li; Zhang, Junyan
2018-04-10
Source PublicationECS Journal of Solid State Science and Technology
Volume7Issue:4Pages:192-196
If1.808
compositor第一作者单位
Document Type期刊论文
Identifierhttp://ir.licp.cn/handle/362003/24318
Collection中国科学院材料磨损与防护重点实验室/先进润滑与防护材料研究发展中心
Corresponding AuthorWang, Fuguo
AffiliationLanzhou Institute of Chemical Physics, Chinese Academy of Science
Recommended Citation
GB/T 7714
Wang, Fuguo,Cao, Zhongyue,Liang, Aimin,et al. Preparation of Inverted Pyramids by Electrochemical and Chemical Etching of n-Type Silicon under Thermodynamic Equilibrium State[J]. ECS Journal of Solid State Science and Technology,2018,7(4):192-196.
APA Wang, Fuguo,Cao, Zhongyue,Liang, Aimin,Zhang, Xingkai,Qiang, Li,&Zhang, Junyan.(2018).Preparation of Inverted Pyramids by Electrochemical and Chemical Etching of n-Type Silicon under Thermodynamic Equilibrium State.ECS Journal of Solid State Science and Technology,7(4),192-196.
MLA Wang, Fuguo,et al."Preparation of Inverted Pyramids by Electrochemical and Chemical Etching of n-Type Silicon under Thermodynamic Equilibrium State".ECS Journal of Solid State Science and Technology 7.4(2018):192-196.
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