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Small but strong: The influence of fluorine atoms on formation and performance of graphene quantum dots using a gradient F-sacrifice strategy 期刊论文
Carbon, 2017, 卷号: 112, 页码: 63-71
Authors:  Gong PW(公培伟);  Wang JQ(王金清);  Hou KM(侯凯明);  Yang ZG(杨志刚);  Wang ZF(王赵峰);  Liu, Zhe;  Han XX(韩修训);  Yang SR(杨生荣);  Wang JQ(王金清);  Han XX(韩修训)
Adobe PDF(4132Kb)  |  Favorite  |  View/Download：164/3  |  Submit date：2017/02/20
Facile preparation of Cu3BiS3 nanorods film through a solution dip-coating process 期刊论文
Journal of Materials Science: Materials in Electronics, 2017, 卷号: 28, 期号: 23, 页码: 17772-17777
Authors:  Li JJ(李佳佳);  Han XX(韩修训);  Zhao Y(赵雲);  Li J(李健);  Wang M(王敏);  Dong C(董琛);  Hao, Zhaomin;  Han XX(韩修训)
Adobe PDF(1260Kb)  |  Favorite  |  View/Download：134/2  |  Submit date：2017/12/19
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download：82/1  |  Submit date：2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States