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Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download：85/1  |  Submit date：2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Step-by-step build-up of ordered p-n heterojunctions at nanoscale for efficient light harvesting 期刊论文
RSC Advances, 2013, 卷号: 3, 期号: 1, 页码: 166-171
Authors:  Yan JF(严俊峰);  Ye Q(叶谦);  Han XX(韩修训);  Zhou F(周峰);  Zhou F(周峰)
Adobe PDF(961Kb)  |  Favorite  |  View/Download：436/4  |  Submit date：2013/12/13