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Sn-filled Si nanotubes fabricated by the facile DC arc discharge method and their photoluminescence property 期刊论文
Journal of Crystal Growth, 2008, 卷号: 310, 页码: 4412-4416
Authors:  Feng JJ(冯娟娟);  Yan PX(阎鹏勋);  Yang Q(杨强);  Chen JT(陈江涛);  Yan D(闫德)
Adobe PDF(563Kb)  |  Favorite  |  View/Download：65/0  |  Submit date：2013/10/18
Nanostructures  Nucleation  Dc Arc Discharge Method  Semiconducting Silicon  
Rapid growth and photoluminescence properties of doped ZnS one-dimensional nanostructures 期刊论文
Journal of Crystal Growth, 2008, 卷号: 310, 页码: 3240-3246
Authors:  Zhuo RF(卓仁富);  Feng HT(冯海涛);  Yan D(闫德);  Chen JT(陈江涛);  Feng JJ(冯娟娟);  Liu JZ(刘金章);  Yan PX(阎鹏勋)
Adobe PDF(1841Kb)  |  Favorite  |  View/Download：171/0  |  Submit date：2013/03/28
Low-dimensional Structures  Photoluminescence Properties  Chemical Vapor Deposition  Zns  Semiconducting Materials  
The effect of La doping concentration on the properties of zinc oxide films prepared by the sol–gel method 期刊论文
Journal of Crystal Growth, 2008, 卷号: 310, 页码: 2627-2632
Authors:  陈江涛;  王君;  张飞;  张广安;  吴志国;  阎鹏勋
Adobe PDF(1284Kb)  |  Favorite  |  View/Download：80/0  |  Submit date：2013/10/18
Crystal Morphology  Crystal Structure  X-ray Diffraction  Sol–gel Method  Semiconducting Ii–vi Materials