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Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes 期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:  Dong C(董琛);  Han XX(韩修训);  Li J(李健);  Gao, Xin;  Yoshio Ohshita;  Han XX(韩修训)
Adobe PDF(862Kb)  |  Favorite  |  View/Download：82/1  |  Submit date：2017/12/18
Gaasn  Schottky Barrier Diodes (Sbds)  Growth Orientation  C-v And G/ω-v Characteristics  Interface States  
Composite Films with Ordered Carbon Nanotubes and Cellulose Nanocrystals 期刊论文
Journal of Physical Chemistry C, 2017, 卷号: 121, 期号: 16, 页码: 8976-8981
Authors:  Sun, Jinhuan;  Zhang, Caihong;  Yuan, Zaiwu;  Ji, Xingxiang;  Fu, Yingjuan;  Li HG(李洪光);  Qin, Menghua;  Li HG(李洪光)
Adobe PDF(5414Kb)  |  Favorite  |  View/Download：64/2  |  Submit date：2017/08/28