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中国科学院兰州化学物理研究所机构知识库
KMS Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences
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固体润滑国家重点实验... [2]
清洁能源化学与材料实... [2]
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Indexed By:SCI
Creator:Yoshio Ohshita分Yoshio Ohshita
Creator:dongchen分董琛
Creator:Gao, Xin
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Community:固体润滑国家重点实验室(LSL)
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Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes
期刊论文
Physica B: Condensed Matter, 2017, 卷号: 527, 页码: 52-56
Authors:
Dong C(董琛)
;
Han XX(韩修训)
;
Li J(李健)
;
Gao, Xin
;
Yoshio Ohshita
;
Han XX(韩修训)
Adobe PDF(862Kb)
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View/Download:85/1
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Submit date:2017/12/18
Gaasn
Schottky Barrier Diodes (Sbds)
Growth Orientation
C-v And G/ω-v Characteristics
Interface States
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates
期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
Authors:
Dong C(董琛)
;
Han XX(韩修训)
;
Gao, Xin
;
Yoshio Ohshita
;
Masafumi Yamaguchi
;
Han XX(韩修训)
Adobe PDF(1243Kb)
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View/Download:183/2
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Submit date:2015/12/30
Gaasn
Schottky Diode
Growth Orientation
I-v Characteristics
C-v Characteristics
Electrical Properties