Selective growth and photoelectrochemical properties of Bi2S3 thin films on functionalized self-assembled monolayers

doi:10.1039/c2ce06713g

	Selective growth and photoelectrochemical properties of Bi2S3 thin films on functionalized self-assembled monolayers
Department	固体润滑国家重点实验室
	Lu YJ(卢永娟); Jia JH(贾均红); Yi GW(易戈文); Jia JH(贾均红)
	2012
Source Publication	CrystEngComm
ISSN	1466-8033
Volume	14 Issue:10 Pages:3433-3440
Abstract	A convenient method for preparing highly crystalline Bi₂S₃ thin films by combining chemical bath deposition with self-assembled monolayers (SAMs) is described. The surface morphology, structure and composition of the resultant Bi₂S₃ thin films were characterized by XPS, XRD and FESEM, respectively. The optical and photoelectrochemical properties of as-prepared Bi₂S₃ thin films with different reaction times were investigated by UV-vis absorption and photocurrent action spectroscopy. It was demonstrated that these properties were dependent on the film thickness which increased with the deposition time. According to the different deposition mechanisms on the NH₂ and CH₃ terminal groups, patterned Bi₂S₃ microarrays with different feature sizes (50, 130, 250 μm) were successfully deposited on –NH₂-terminated SAMs regions of –NH₂/–CH₃ patterned SAMs surfaces. Clearly, with a decrease in feature size, the absorption intensity and photocurrent density of the patterned Bi₂S₃ thin film increased, which was due to the increased Bi₂S₃ surface area as well as the increased optical path length within the patterned Bi₂S₃ thin film, resulting from multiple reflection of incident light. The photocurrent density of the patterned thin film for the 50 μm-size feature exhibited an almost 9 times larger photocurrent density than a similar thin film without patterning. This work indicates that patterned Bi₂S₃ thin films are attractive systems for surface tailoring and also provide a novel approach to effectively control the photoelectrochemical properties of nanostructured Bi₂S₃ thin films with promising applications in microsystem devices for solar energy conversion.
Subject Area	材料科学与物理化学
DOI	10.1039/c2ce06713g
Funding Organization	the National Natural Science Foundation of China (Grant Nos. 50972148;51175490);the “Hundred Talents Program” of Chinese Academy of Sciences (Grant No. KGCX2-YW-804)
Indexed By	SCI
If	3.879
Language	英语
Funding Project	高温抗磨材料组
compositor	第一作者单位
Citation statistics	Cited Times:32[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.licp.cn/handle/362003/3326
Collection	固体润滑国家重点实验室（LSL）
Corresponding Author	Jia JH(贾均红)
Affiliation	Chinese Acad Sci, Lanzhou Inst Chem Phys, Lanzhou 730000, Peoples R China
Recommended Citation GB/T 7714	Lu YJ,Jia JH,Yi GW,et al. Selective growth and photoelectrochemical properties of Bi2S3 thin films on functionalized self-assembled monolayers[J]. CrystEngComm,2012,14(10):3433-3440.
APA	Lu YJ,Jia JH,Yi GW,&贾均红.(2012).Selective growth and photoelectrochemical properties of Bi2S3 thin films on functionalized self-assembled monolayers.CrystEngComm,14(10),3433-3440.
MLA	Lu YJ,et al."Selective growth and photoelectrochemical properties of Bi2S3 thin films on functionalized self-assembled monolayers".CrystEngComm 14.10(2012):3433-3440.

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