LICP OpenIR  > 固体润滑国家重点实验室(LSL)
Synthesis and characterization of quaternary Ti-Si-C-N film deposited by middle frequency magnetron sputtering
Department固体润滑国家重点实验室
Jiang JL(姜金龙); Chen D(陈娣); Zhu WJ(朱伟君); Jiang JL(姜金龙)
2012
Source PublicationAdvanced Materials Research
ISSN1022-6680
Volume581-582Pages:540-543
AbstractQuaternary Ti-Si-C-N films were deposited Si wafer by middle frequency magnetron sputtering Ti80Si20 twin-targets in mixture atmosphere of Ar, CH4 and N2. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) results indicate that the films present an amorphous structure with no columnar structure. These films are quite uniform and dense without large particles. The film deposited at 10 sccm CH4 and 10 sccm N2 flow rates exhibits a maximum hardness of 18.9 GPa and high elastic recovery of 97%.
KeywordTi-si-c-n Films Microstructure Mf Magnetron Sputtering
Subject Area材料科学与物理化学
Funding Organizationthe Natural Science Foundation of China (51105186);the Nature Science Foundation of Gansu Province (1014RJZA007);the Development Program for Outstanding Young Teachers in Lanzhou University of Technology (1010ZCX010)
Indexed ByEI
Language英语
Funding Project低维材料摩擦学组
Document Type期刊论文
Identifierhttp://ir.licp.cn/handle/362003/3278
Collection固体润滑国家重点实验室(LSL)
Corresponding AuthorJiang JL(姜金龙)
Recommended Citation
GB/T 7714
Jiang JL,Chen D,Zhu WJ,et al. Synthesis and characterization of quaternary Ti-Si-C-N film deposited by middle frequency magnetron sputtering[J]. Advanced Materials Research,2012,581-582:540-543.
APA Jiang JL,Chen D,Zhu WJ,&姜金龙.(2012).Synthesis and characterization of quaternary Ti-Si-C-N film deposited by middle frequency magnetron sputtering.Advanced Materials Research,581-582,540-543.
MLA Jiang JL,et al."Synthesis and characterization of quaternary Ti-Si-C-N film deposited by middle frequency magnetron sputtering".Advanced Materials Research 581-582(2012):540-543.
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