Pressure-induced insulator-semiconductor transition in bilayer hexagonal boron nitride | |
Department | 固体润滑国家重点实验室 |
An, Xuhong1,2; Sun JH(孙军辉)1; Lu ZB(鲁志斌)1; Ma, Fei2; Zhang GA(张广安)1; Lu ZB(鲁志斌) | |
2017 | |
Source Publication | Ceramics International |
ISSN | 0272-8842 |
Volume | 43Issue:8Pages:6626-6630 |
Abstract | The electronic properties of hexagonal boron nitride (h-BN) are controllable by applying normal pressure. In this work, we perform first -principles density functional calculation to investigate electronic structure of several h-BN bilayers with different stacking patterns under normal pressure. The results suggest that the band gap of h-BN bilayer, surprisingly, undergoes both decreasing and increasing trend with increasing of normal pressure, which is considerably different from monotonously decreasing by applying electric field. Furthermore, it is found that the transformation from a direct-to an indirect-gap can be achieved in the case of stacking pattern II as the pressure above 34.3%. However, the insulator-semiconductor transition can be induced for stacking pattern I and III under similar normal pressure. The studies indicate a unique yet easy pathway to tune the electronic properties of h-BN by normal pressure, which may pave the way for their potential applications as optoelectronic device materials. |
Keyword | Hexagonal Boron Nitride Normal Pressure Band Gap |
Subject Area | 材料科学与物理化学 |
DOI | 10.1016/j.ceramint.2017.02.037 |
Funding Organization | National Natural Science Foundation of China (Grant No. 51305433);Key Program of the Chinese Academy of Sciences (No. QYZDY-SSW-JSC009) |
Indexed By | SCI |
If | 2.986 |
Language | 英语 |
Funding Project | 低维材料摩擦学研究组 |
compositor | 第一作者单位 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.licp.cn/handle/362003/21984 |
Collection | 固体润滑国家重点实验室(LSL) |
Corresponding Author | Ma, Fei; Lu ZB(鲁志斌) |
Affiliation | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 2.Lanzhou Univ, Inst Nanosci & Nanotechnol, Lanzhou 730000, Peoples R China |
Recommended Citation GB/T 7714 | An, Xuhong,Sun JH,Lu ZB,et al. Pressure-induced insulator-semiconductor transition in bilayer hexagonal boron nitride[J]. Ceramics International,2017,43(8):6626-6630. |
APA | An, Xuhong,Sun JH,Lu ZB,Ma, Fei,Zhang GA,&鲁志斌.(2017).Pressure-induced insulator-semiconductor transition in bilayer hexagonal boron nitride.Ceramics International,43(8),6626-6630. |
MLA | An, Xuhong,et al."Pressure-induced insulator-semiconductor transition in bilayer hexagonal boron nitride".Ceramics International 43.8(2017):6626-6630. |
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1-s2.0-S027288421730(1039KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text |
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