| Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity | |
| Department | 先进润滑与防护材料研究发展中心 |
Wang LQ(王凌倩)1,4; Wang, Weiyan2; Huang, Junjun2; Zeng, Yuheng2; Tan, Ruiqin3; Song, Weijie2; Chen JM(陈建敏)1 ; Chen JM(陈建敏)
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| The second department | 固体润滑国家重点实验室 |
| 2013 | |
| Source Publication | Journal of Non-Crystalline Solids
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| ISSN | 0022-3093 |
| Volume | 378Pages:177-180 |
| Abstract | Boron-doped a-Si:H thin films were deposited by ion beam assisted magnetron sputtering under different assisted argon ion beam energies, and the changes of structural and electrical properties of the thin films were investigated using Raman spectroscopy, spectroscopic ellipsometry and semiconductor parameter measurement system. It was observed that the short-range order of boron-doped a-Si:H thin films decreased slightly and the defect density of thin films increased with increasing assisted argon ion beam energy. The dark conductivity of boron-doped a-Si:H thin films improved significantly with increasing assisted argon ion beam energy. The conductivity of the boron-doped a-Si:H thin films with 500 eV argon ion beam bombardment was 2.1 x 10-7 S.cm-1, which was about three orders of magnitude higher than that of the thin films deposited without assisted ion beam. The significant change in conductivity of the boron-doped a-Si:H thin films deposited with assisted argon ion beam was mainly ascribed to the activation of threefold coordinated boron atoms. |
| Keyword | Argon Ion Beam Assisted Magnetron Sputtering Boron-doped A-si:h Thin Film Dark Conductivity |
| Subject Area | 材料科学与物理化学 |
| DOI | 10.1016/j.jnoncrysol.2013.07.005 |
| Funding Organization | the Zhejiang Provincial Natural Science Foundation of China (grant no. LY12E02009);the Ningbo Natural Science Foundation of China (grant no. 2012A610120) |
| Indexed By | SCI |
| If | 1.716 |
| Language | 英语 |
| compositor | 第一作者单位 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.licp.cn/handle/362003/18239 |
| Collection | 中国科学院材料磨损与防护重点实验室/先进润滑与防护材料研究发展中心 固体润滑国家重点实验室（LSL） |
| Corresponding Author | Chen JM(陈建敏) |
| Affiliation | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China 3.Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| Recommended Citation GB/T 7714 | Wang LQ,Wang, Weiyan,Huang, Junjun,et al. Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity[J]. Journal of Non-Crystalline Solids,2013,378:177-180. |
| APA | Wang LQ.,Wang, Weiyan.,Huang, Junjun.,Zeng, Yuheng.,Tan, Ruiqin.,...&陈建敏.(2013).Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity.Journal of Non-Crystalline Solids,378,177-180. |
| MLA | Wang LQ,et al."Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity".Journal of Non-Crystalline Solids 378(2013):177-180. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| LZ01027718 .pdf（553KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
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