LICP OpenIR  > 固体润滑国家重点实验室(LSL)
Molecular dynamical simulations on a-C:H film growth from atomic flux of C and H: Effect of H fraction
Department固体润滑国家重点实验室 ; 先进润滑与防护材料研究发展中心
Quan WL(权伟龙); Li HX(李红轩); Zhao F(赵飞); Ji L(吉利); Du W(杜雯); Zhou HD(周惠娣); Chen JM(陈建敏)
2010
Source PublicationPhysics Letters A
ISSN0375-9601
Volume374Issue:21Pages:2150-2155
AbstractMolecular dynamical simulations are carried out to studying the hydrogenated amorphous carbon (a-C:H) film growth from C and H atoms. The effects of the H fraction in source atoms and incident energy on the film formation are investigated. Our simulations show that almost all the H atoms incorporating into the films bond to carbon and the amount of H2 molecules is very slight. Increasing the H fraction in source atoms raises the sp3-C fraction, leads to a linear increase of H concentration in film, but decreases the film growth rate. The influence of H fraction on the film growth mechanism is also discussed.
KeywordHydrogenated Carbon Film h Fraction Deposition Mechanism Molecular Dynamical Simulation
Subject Area材料科学与物理化学
Funding Organizationthe National Natural Science Foundation of China (Grant No. 50705093, No. 50575217);the Innovative Group Foundation from NSFC (Grant No.50421502);the National 973 Project (No. 2007 CB607601)
Indexed BySCI
Language英语
Funding Project磨损和表面工程组
Document Type期刊论文
Identifierhttp://ir.licp.cn/handle/362003/1053
Collection固体润滑国家重点实验室(LSL)
中国科学院材料磨损与防护重点实验室/先进润滑与防护材料研究发展中心
Corresponding AuthorChen JM(陈建敏)
Recommended Citation
GB/T 7714
Quan WL,Li HX,Zhao F,et al. Molecular dynamical simulations on a-C:H film growth from atomic flux of C and H: Effect of H fraction[J]. Physics Letters A,2010,374(21):2150-2155.
APA 权伟龙.,李红轩.,赵飞.,吉利.,杜雯.,...&陈建敏.(2010).Molecular dynamical simulations on a-C:H film growth from atomic flux of C and H: Effect of H fraction.Physics Letters A,374(21),2150-2155.
MLA 权伟龙,et al."Molecular dynamical simulations on a-C:H film growth from atomic flux of C and H: Effect of H fraction".Physics Letters A 374.21(2010):2150-2155.
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