A fair use statement regarding the full text of the request

Your requested [Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes] is currently limited to Lanzhou Institute of Chemical Physics，Chinese Academy of Sciences internal sharing.

To solicit author authorization, you need to provide the following information: name, organization, personal e-mail, reason for request. The information you provide will be reviewed and you are committed to the truth of the information provided. The personal information you provide will be protected according to law.